BS IEC 62047-34:2019 pdf free download – Semiconductor devices – Micro- electromechanical devices
1 Scope
This part of IEC 62047 describes test conditions and test methods of electric character, static performances and thermal performances for MEMS pressure-sensitive devices. This document applies to test for both open and closed loop piezoresistive MEMS pressure devices on wafer.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content constitutes requirements of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies.
IEC 61 1 93-2, Quality assessment systems – Part 2: Selection and use of sampling plans for inspection of electronic components and packages
IEC 60747-1 4-3, Semiconductor devices – Part 14-3: Semiconductor sensors – Pressure sensors
3.1 piezoresistive pressure-sensitive
device device that transforms pressure signal into electric signal due to piezoresistive effect, usually including cavity-membrane structure on silicon substrate and Wheatstone bridge in the membrane fabricated by MEMS technology
4.1 Atmospheric conditions
The measurement of characteristics shall be carried out under the following atmospheric conditions unless otherwise specified.
a) Standard atmospheric conditions Temperature range: 1 5 °C to 35 °C;
Relative humidity range: 20 % to 80 %;
Atmospheric pressure range: 86 kPa to 1 06 kPa.
b) Standard reference atmospheric conditions Temperature: 20 °C;
Relative humidity: 65 %;
Atmospheric pressure: 1 01 ,3 kPa.
The standard reference atmospheric conditions are corrected values derived from testing values under any other atmospheric conditions. In most circumstances, temperature and atmospheric pressure are the only factors to be considered.
4.2 Electromagnetic conditions
No other external magnetic field should exist in the testing environment except geomagnetic field. The specific requirements should be in accordance with the device technical conditions.
4.3 Vibration conditions
No mechanical vibration should exist in the testing environment. The specific requirements should be in accordance with the device technical conditions.
4.4 Test system
The test system consists of probe station, pressure control device, heating and cooling system, excitation power supply, as well as reading and recording device. The tolerance errors of the test system are listed below.
a) The absolute value of the intrinsic error of pressure control device should be under 1 /3 of the intrinsic error bound of the pressure-sensitive device.
b) The temperature measurement accuracy of heating and cooling system should be ±2 °C around the preset temperature.
c) The fluctuation of excitation power supply should be under 1 /5 of the intrinsic error bound of the pressure-sensitive device.
d) The absolute value of the intrinsic error of the reading and recording device should be under 1 /5 of the intrinsic error bound of the pressure-sensitive device.
6.1 Test preparation
The resistance test system of the probe station should be calibrated using standard resistance substrate. Build the test system according to 5.3. Fix the wafer on the probe station and the probe (or probe card) should be in the same horizontal plane. Adjust the height of the wafer supporting stage and the scanning horizontal line to insure reliable connection between the wafer pins and the probes during testing. Set the parameters of the system.