BS IEC 60747-8:2000 pdf free download – Semiconductor devices
5.3.5.1 Gate cut-off current
Gate leakage current Maximum value, at specified gate-source of drain-gate voltage, other terminal connections being specified, at an operating temperature of 25 °C and at one specified higher operating temperature. Together with: Maximum value of the current of all gates connected together, at specified gate-source or drain-gate voltage, at an operating temperature of 25 °C and at one specified higher operating temperature.
5.3.5.2 Drain cut-off current
Maximum value, at specified drain-source and gate-source voltages, other terminal connections being specified, at an operating temperature of 25。C and at one specified higher operating temperature.
5.3.5.3 Drain current at zero gate-source voltage (/pss)
Minimum and maximum values, at a specified drain-source voltage, other terminal connections being specified, at an operating temperature of 25 °C and, where appropriate, at one specified higher operating temperature.
5.3.5.4 Drain current at specified gate-source voltage (/bsx)
Minimum and maximum values, for specified gate-source and drain-source voltages，other terminal connections being specified， at an operating temperature of 25 °C and，where appropriate， at one specified higher operating temperature.
5.3.5.5 Gate-source cut-off voltage (Vcsoff)
Minimum and maximum values of gate-source voltage at which the drain current has been reduced to a specified low value， other terminal connections being specified over the range of operating temperature.
5.3.5.6 Gate-source threshold voltage (VGs(To)
Minimum and maximum values, at a specified high value of drain-source voltage and at a value of drain current equal to or more than 10 times the maximum value of drain current at zero gate voltage， other terminal connections being specified, at an operating temperature of 25。C and, where appropriate, at one specified higher operating temperature.
5.3.6.5 Capacitances at a specified low frequency
a) Drain-source capacitance Maximum small-signal value, at zero drain-source voltage, at a specified gate-source voltage, with the gate short-circuited for a.c. to the source.
b) Drain-gate capacitance Maximum small-signal value at zero drain-source voltage, at a specified gate-source voltage, with the gate short-circuited for a.c. to the source.
c) Gate-source capacitance (where appropriate) Maximum: small-signal value at zero drain-source voltage， at a specified gate-source voltage, with the drain short-circuited for a.c. to the source
5.3.6.6 Forward transconductance (9fs) (for power MOSFET only)
Minimum value, for specified drain-source voltage and drain current, at an operating temperature of 25°C and, where appropriate, at a specified higher temperature.