BS IEC 63068-1:2019 pdf free download – Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices
1 Scope
This part of IEC 63068 gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content constitutes requirements of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. There are no normative references in this document.
3.4 6H-SiC
SiC crystal showing a hexagonal symmetry, in which six Si-C layers are periodically arranged along the crystallographic c-axis
Note 1 to entry: The crystal structure of 6H-SiC is similar to wurtzite with a unit cell having six periodical  ccupied sites along the <0001 > direction.
3.5 crystal plane
plane, usually denoted as (hkl), representing the intersection of a plane with the a-, b- and c-axes of the unit cell at distances of 1 /h, 1 /k and 1 /l, where h, k and l are integers
Note 1 to entry: The integers h, k and l are usually referred to as the Miller indices of a crystal plane.
Note 2 to entry: In 4H-SiC showing a hexagonal symmetry, four-digit indices are frequently used for planes (hkil).
[SOURCE: ISO 241 73:2009, 3.2, modified – Note 2 to entry has been entirely redrafted.]
3.6 crystal direction
direction, denoted as [uvw], representing a vector direction in multiples of the basis vectors describing the a-, b- and c-axes
Note 1 to entry: In 4H-SiC showing a hexagonal symmetry, four-digit indices [uvtw] are frequently used for crystal directions.
Note 2 to entry: Families of symmetrically equivalent directions are written by <uvw> and <uvtw> for cubic and hexagonal symmetries, respectively.
[SOURCE: ISO 241 73:2009, 3.3, modified – Note 1 to entry and Note 2 to entry have been added.]
3.7 polytypism
phenomenon where a material occurs in several structural modifications, each of which can be regarded as built up by stacking layers of identical structure and chemical composition
3.8 polytype
one of the modifications of monocrystalline material which shows polytypism
3.9 substrate
material on which homoepitaxial layer is deposited
3.1 0 homoepitaxial layer
thin monocrystalline film epitaxially-formed on a substrate of the same material and crystallographic orientation, inheriting the atomic order of the substrate
3.1 1 crystal
monocrystalline material
3.1 2 lattice site
arrangement position of the atoms in crystal