IEC 60747-14-2:2000 pdf free download – Semiconductor devices
1.1 Scope
This part of lEC 60747 provides standards for packaged semiconductor Hall elements whichutilize the Hall effect.
1.2Normative references
The following normative documents contain provisions which，through reference in this text,constitute provisions of this part of lEC 60747.For dated references, subsequent amendmentsto，or revisions of，any of these publications do not apply. However，parties to agreementsbased on this part of iEC 60747 are encouraged to investigate the possibility of applying themost recent editions of the normative documents indicated below.For undated references, thelatest edition of the normative document referred to applies. Members of lSO and lEC maintainregisters of currently valid International Standards.
IEC 60747-1:1983,Semiconductor devices – Discrete devices and integrated circuits – Part 1:General
IEC 61340-5-1:1998,Electrostatics – Part 5-1: Protection of electronic devices from electro-static phenomena – General requirements
1.3Definitions
For the purpose of this International Standard, the following definitions apply.
1.3.1 semiconductor Hall element
semiconductor device that generates the voltage upon application of a magnetic field withmagnetic flux density, being proportional to the control voltage (see below) and the magneticflux density
1.3.2 Hall mobility
electron mobility measured with the usage of the Hall effect
1.3.3 control current
current to be applied continuously to the input terminals of the device when the outputterminals are not connected to external circuit
1.3.4 control voltage
voltage to be applied continuously to the input terminals of the device when the outputterminals are not connected to external circuit
1.3.5 offset voltage (or residual voltage)
voltage to be derived between the output terminals when a specified current or voltage isapplied to the input terminals of the device without magnetic field
1.3.6 output Hall voltage
the difference between the voltage，which is derived across the output terminals when aspecified current or voltage is applied to the input terminals of the device in a specifiedmagnetic field, and the offset voltage
1.3.7 residual ratio
the ratio of the offset voltage to the output Hall voltage
1.3.8 input resistance
resistance between the input terminals of the device when the output terminals are notconnected to external circuit
1.3.9 output resistance
resistance between the output terminals of the device when the input terminals are notconnected to external circuit
1.3.10 temperature coefficient of output Hall voltage
relative change in output Hall voltage referred to the change in temperature
1.3.11 temperature coefficient of input resistance
relative change in input resistance referred to the change in temperature
1.4.2Terminals
The terminal numbers and their designation for packaged Hall elements are shown in figure 1and table 2. The designation of the terminals is listed below.The (+) and (-) signs of the outputterminals assume that the magnetic line of force passes through from the top to the bottom ofthe Hall element.
2.1.1 Element materials
Useful materials for Hall elements are semiconductor materials like GaAs, InSb， InAs， Si, etc.Ratings of Hall elements depend on the element materials.
2.1.2Handling precautions
Due to a rather thin layer of semiconductor sensing region, the devices may be irreversiblydamaged if an excessive voltage is allowed to build up, for example due to contact withelectrostatically charged persons, leakage currents from soldering irons,etc.
When handling the devices，the handling precautions given in IEC 60747-1，chapter lX,clause 1, shall therefore be observed.